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UT8Q512 512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V.
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UT8Q512 512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V.
UT8Q512-20ICA 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow.
UT8Q512-20ICC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow.
UT8Q512-20IPC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow.
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UT8Q512-20IWX 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow.
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